K. N. Toosi University of Technology
Faculty of Electrical Eng.
فارسی
Tuesday, September 19, 2017
Farshid
Name: Farshid
Family: Raissi
Rank: Associate Professor
Department: Electrical engineering - electronics
Home page:
Email: raissi(at-sign)eetd.kntu.ac.ir

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Fields/Core Research Areas:

Nanotechnology and Nanoelectronics

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Education:

  • Ph.D: Ph. D from university of Wisconsin-Madison in 1995
  • M.Sc: MS from university of Wisconsin-Madison in 1992
  • B.Sc: BS degree in electrical engineering from Louisiana State University, Baton Rouge, USA in 1988.

 

Interested Research Fields:

In our research group we have been following several lines of research. Recently we have concentrated our efforts on fabricating digital circuits based on soliton transistor.

We are also working on nano scale semiconductor devices which have superior characteristics compared to regular MOS transistors at device lenghts below 80 nm.

This work has resulted in proposing two new transistors. One is a modified version of the field effect diode (modified FED) which provides orders of magnitude

larger current than regular MOS transistors, and the other is an MOS transistor which uses an undoped (intrinsic) channel and provides n and p transistors!

This device which we call Intrinsic Bulk MOS (IBMOS) has a larger Ion/Ioff ratio than regular MOSFETs in nanoscale regime.

Two patents have been filed for these inventions.

 
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